Thin film transistor structure and manufacturing method of the same
A thin film transistor (TFT) structure is provided herein, which comprises a substrate, a light-shielding resin, a polysilicon, a gate electrode insulator, a gate electrode, an interlayer dielectric layer, a source electrode, and a drain electrode. The light-shielding resin has functions of light-sh...
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| Main Authors | , |
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| Format | Patent |
| Language | English |
| Published |
26.02.2019
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A thin film transistor (TFT) structure is provided herein, which comprises a substrate, a light-shielding resin, a polysilicon, a gate electrode insulator, a gate electrode, an interlayer dielectric layer, a source electrode, and a drain electrode. The light-shielding resin has functions of light-shielding and insulation. With doping through two through holes at two sides, the manufacturing process is simplified, the exposure process is simplified, the production time is shortened, the usage of masks is decreased, and the production cost is lowered. |
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| AbstractList | A thin film transistor (TFT) structure is provided herein, which comprises a substrate, a light-shielding resin, a polysilicon, a gate electrode insulator, a gate electrode, an interlayer dielectric layer, a source electrode, and a drain electrode. The light-shielding resin has functions of light-shielding and insulation. With doping through two through holes at two sides, the manufacturing process is simplified, the exposure process is simplified, the production time is shortened, the usage of masks is decreased, and the production cost is lowered. |
| Author | Tu, Wanghua Yin, Wanting |
| Author_xml | – fullname: Tu, Wanghua – fullname: Yin, Wanting |
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| Notes | Application Number: US201615303047 |
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| PublicationYear | 2019 |
| RelatedCompanies | Wuhan China Star Optoelectronics Technology Co., Ltd |
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| Snippet | A thin film transistor (TFT) structure is provided herein, which comprises a substrate, a light-shielding resin, a polysilicon, a gate electrode insulator, a... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | Thin film transistor structure and manufacturing method of the same |
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