Thin film transistor structure and manufacturing method of the same

A thin film transistor (TFT) structure is provided herein, which comprises a substrate, a light-shielding resin, a polysilicon, a gate electrode insulator, a gate electrode, an interlayer dielectric layer, a source electrode, and a drain electrode. The light-shielding resin has functions of light-sh...

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Bibliographic Details
Main Authors Tu, Wanghua, Yin, Wanting
Format Patent
LanguageEnglish
Published 26.02.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A thin film transistor (TFT) structure is provided herein, which comprises a substrate, a light-shielding resin, a polysilicon, a gate electrode insulator, a gate electrode, an interlayer dielectric layer, a source electrode, and a drain electrode. The light-shielding resin has functions of light-shielding and insulation. With doping through two through holes at two sides, the manufacturing process is simplified, the exposure process is simplified, the production time is shortened, the usage of masks is decreased, and the production cost is lowered.
Bibliography:Application Number: US201615303047