High temperature annealing in X-ray source fabrication

The present disclosure relates to multi-layer X-ray sources having decreased hydrogen within the layer stack and/or tungsten carbide inter-layers between the primary layers of X-ray generating and thermally-conductive materials. The resulting multi-layer target structures allow increased X-ray produ...

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Bibliographic Details
Main Authors Liang, Yong, Robinson, Vance Scott
Format Patent
LanguageEnglish
Published 26.02.2019
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Summary:The present disclosure relates to multi-layer X-ray sources having decreased hydrogen within the layer stack and/or tungsten carbide inter-layers between the primary layers of X-ray generating and thermally-conductive materials. The resulting multi-layer target structures allow increased X-ray production, which may facilitate faster scan times for inspection or examination procedures.
Bibliography:Application Number: US201615280701