High temperature annealing in X-ray source fabrication
The present disclosure relates to multi-layer X-ray sources having decreased hydrogen within the layer stack and/or tungsten carbide inter-layers between the primary layers of X-ray generating and thermally-conductive materials. The resulting multi-layer target structures allow increased X-ray produ...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
26.02.2019
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Subjects | |
Online Access | Get full text |
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Summary: | The present disclosure relates to multi-layer X-ray sources having decreased hydrogen within the layer stack and/or tungsten carbide inter-layers between the primary layers of X-ray generating and thermally-conductive materials. The resulting multi-layer target structures allow increased X-ray production, which may facilitate faster scan times for inspection or examination procedures. |
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Bibliography: | Application Number: US201615280701 |