Semiconductor devices and methods of forming the same

According to embodiments of the inventive concept, a gate electrode is formed on a substrate, and a first spacer, a second spacer, and a third spacer are sequentially formed on a sidewall of the gate electrode. The substrate is etched to form a recess region. A compressive stress pattern is formed i...

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Bibliographic Details
Main Authors Roh, Donghyun, Park, Pankwi, Shin, Dongsuk, Lee, Chulwoong, Lee, Nae-in
Format Patent
LanguageEnglish
Published 15.01.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:According to embodiments of the inventive concept, a gate electrode is formed on a substrate, and a first spacer, a second spacer, and a third spacer are sequentially formed on a sidewall of the gate electrode. The substrate is etched to form a recess region. A compressive stress pattern is formed in the recess region. A protective spacer is formed on a sidewall of the third spacer. When the recess region is formed, a lower portion of the second spacer is removed to form a gap region between the first and third spacers. The protective spacer fills the gap region.
Bibliography:Application Number: US201615374093