Surface acoustic wave (SAW) resonator

An apparatus includes a silicon (Si) substrate having a first surface and a second surface, the silicon substrate having a resistivity at room temperature greater than approximately 1000 Ω-cm, and less than approximately 15000 Ω-cm; and a piezoelectric layer disposed over the substrate and having a...

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Bibliographic Details
Main Authors Gilbert, Stephen Roy, Ruby, Richard C, Larson, III, John D
Format Patent
LanguageEnglish
Published 08.01.2019
Subjects
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
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Summary:An apparatus includes a silicon (Si) substrate having a first surface and a second surface, the silicon substrate having a resistivity at room temperature greater than approximately 1000 Ω-cm, and less than approximately 15000 Ω-cm; and a piezoelectric layer disposed over the substrate and having a first surface and a second surface. The piezoelectric layer may have a thickness in the range of approximately 0.5 μm to approximately 30.0 μm, and is substantially without iron (Fe).
Bibliography:Application Number: US201615056664