High voltage metal oxide semiconductor device

A high voltage MOS device includes: a first drift region with a first conductive type, a body region with a second conductive type, plural second drift regions with the second conductive type, a gate, a source region with the first conductive type, a drain with the first conductive type, and a body...

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Bibliographic Details
Main Authors Huang, Tsung-Yi, Chen, Chu-Feng
Format Patent
LanguageEnglish
Published 08.01.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A high voltage MOS device includes: a first drift region with a first conductive type, a body region with a second conductive type, plural second drift regions with the second conductive type, a gate, a source region with the first conductive type, a drain with the first conductive type, and a body contact region with the second conductive type. The plural second drift regions contact the body region along the lateral direction, and are located separately in the width direction. Any neighboring two second drift regions do not contact each other. Each of the second drift regions is separated from the drain by the first drift region.
Bibliography:Application Number: US201715662277