Subtractive etch interconnects

• Main Authors: Simon, Andrew H, Filippi, Ronald G, Choi, Samuel S, Lustig, Naftali E, Bao, Junjing, Bonilla, Griselda
• Format: Patent
• Language: English
• Published: 08.01.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method of forming an integrated metal line and interconnect. The method may include forming a first trench in a first ILD exposing a lower metal line, the first ILD is above a substrate, and the lower metal line is in the substrate; forming a first barrier layer in the first trench; forming an integrated metal layer (including a first metal line and a first via) on the first barrier layer; forming a first hardmask on the integrated metal layer; forming an isolation trench in the first hardmask and in the first metal line; forming a second barrier layer in the isolation trench; removing a portion of the second barrier layer from a bottom of the isolation trench exposing the first ILD; and forming a second ILD on the second barrier and in the isolation trench, where a bottom of the second ILD is in the first ILD.