Methods, apparatus and system for gate cut process using a stress material in a finFET device

At least one method, apparatus and system disclosed herein involves a gate cut process using a stress material for a finFET device. A set of fins are formed on a semiconductor substrate. A gate region is formed above a portion of the set of fins. A gate cut trench is formed within the gate region. A...

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Bibliographic Details
Main Authors Wu, Xusheng, Huang, Haigou
Format Patent
LanguageEnglish
Published 08.01.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:At least one method, apparatus and system disclosed herein involves a gate cut process using a stress material for a finFET device. A set of fins are formed on a semiconductor substrate. A gate region is formed above a portion of the set of fins. A gate cut trench is formed within the gate region. A dielectric material comprising an intrinsic stress is deposited into the gate cut region. A replacement metal gate process is performed in the gate region. Residue metal features are removed about the gate cut region.
Bibliography:Application Number: US201715673232