Ink for forming P layers in organic electronic devices

An ink that can form a P-type layer in an organic electronic device. The ink includes at least nanoparticles of P-type semiconductor metal oxide(s) selected from among V2O5, NiO, MoO3, WO3 and mixtures thereof and an ionomer, the ionomer being a perfluorosulfonate copolymer, the mass ratio between t...

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Bibliographic Details
Main Authors Manceau, Matthieu, Berson, Solenn
Format Patent
LanguageEnglish
Published 08.01.2019
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CABLES
CHEMICAL PAINT OR INK REMOVERS
CHEMISTRY
COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS
CONDUCTORS
CORRECTING FLUIDS
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FILLING PASTES
INKS
INSULATORS
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
PASTES OR SOLIDS FOR COLOURING OR PRINTING
POLISHES
SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES
SEMICONDUCTOR DEVICES
USE OF MATERIALS THEREFOR
WOODSTAINS
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Summary:An ink that can form a P-type layer in an organic electronic device. The ink includes at least nanoparticles of P-type semiconductor metal oxide(s) selected from among V2O5, NiO, MoO3, WO3 and mixtures thereof and an ionomer, the ionomer being a perfluorosulfonate copolymer, the mass ratio between the ionomer and the nanoparticles of P-type semiconductor metal oxide(s) selected from among V2O5, NiO, MoO3, WO3 and mixtures thereof being between 0.005 and 0.115. Also, a P layer of an organic electronic device, an electronic device and the formation method thereof.
Bibliography:Application Number: US201415039158