Mechanical memory transistor

• Main Author: Bozler, Carl O
• Format: Patent
• Language: English
• Published: 11.12.2018
• Subjects: ADVERTISING; BASIC ELECTRIC ELEMENTS; CRYPTOGRAPHY; DISPLAY; DISPLAYING; EDUCATION; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC SWITCHES; ELECTRICITY; EMERGENCY PROTECTIVE DEVICES; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT; INFORMATION STORAGE; LABELS OR NAME-PLATES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MEASURING; MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK; NANOTECHNOLOGY; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS; OPTICS; PERFORMING OPERATIONS; PHYSICS; RELAYS; SEALS; SELECTORS; SEMICONDUCTOR DEVICES; SIGNS; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; STATIC STORES; TESTING; TRANSPORTING

A mechanical memory transistor includes a substrate having formed thereon a source region and a drain region. An oxide is formed upon a portion of the source region and upon a portion of the drain region. A pull up electrode is positioned above the substrate such that a gap is formed between the pull up electrode and the substrate. A movable gate has a first position and a second position. The movable gate is located in the gap between the pull up electrode and the substrate. The movable gate is in contact with the pull up electrode when the movable gate is in a first position and is in contact with the oxide to form a gate region when the movable gate is in the second position. The movable gate, in conjunction with the source region and the drain region and when the movable gate is in the second position, form a transistor that can be utilized as a non-volatile memory element.