Semiconductor device and method for manufacturing semiconductor device

According to one embodiment, a first semiconductor body extends in a stacking direction of a stacked body through a first stacked unit and contacts a foundation layer. A plurality of contact vias extend in the stacking direction through an insulating layer and contact a plurality of terrace portions...

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Bibliographic Details
Main Author Fukumura, Tatsuya
Format Patent
LanguageEnglish
Published 04.12.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:According to one embodiment, a first semiconductor body extends in a stacking direction of a stacked body through a first stacked unit and contacts a foundation layer. A plurality of contact vias extend in the stacking direction through an insulating layer and contact a plurality of terrace portions. A second semiconductor body extends in the stacking direction through a second stacked unit. An insulating film is provided between the foundation layer and a lower end portion of the second semiconductor body.
Bibliography:Application Number: US201615207847