Crystalline silicon ingot and method of fabricating the same

A crystalline silicon ingot and a method of fabricating the same are disclosed. The crystalline silicon ingot of the invention includes multiple silicon crystal grains growing in a vertical direction of the crystalline silicon ingot. The crystalline silicon ingot has a bottom with a silicon crystal...

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Bibliographic Details
Main Authors Ni, Sheng-Hua, Hsiao, Ming-Kung, Huang, Pei-Kai, Yang, Yu-Min, Yu, Wen-Huai, Hsu, Sung-Lin, Yang, Cheng-Jui, Hsu, Wen-Ching, Lan, Chung-Wen, Lin, Ching-Shan
Format Patent
LanguageEnglish
Published 27.11.2018
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
COMPOUNDS THEREOF
CRYSTAL GROWTH
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:A crystalline silicon ingot and a method of fabricating the same are disclosed. The crystalline silicon ingot of the invention includes multiple silicon crystal grains growing in a vertical direction of the crystalline silicon ingot. The crystalline silicon ingot has a bottom with a silicon crystal grain having a first average crystal grain size of less than about 12 mm. The crystalline silicon ingot has an upper portion, which is about 250 mm away from said bottom, with a silicon crystal grain having a second average crystal grain size of greater than about 14 mm.
Bibliography:Application Number: US201615070610