Method for compensation of manufacturing tolerances of at least one electric parameter of a power transistor and associated system

The system (21) has a data carrier (60) comprising data related to manufacturing tolerance of an electric parameter of a power transistor (22) i.e. insulated gate bipolar transistor. An electric circuit (26) controls the transistor adapted to operate for a reference value of the parameter. Another e...

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Bibliographic Details
Main Authors Cara, Herve, Nicolai, Jean-Marc, Richard, Stephane
Format Patent
LanguageEnglish
Published 20.11.2018
Subjects
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
PULSE TECHNIQUE
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Summary:The system (21) has a data carrier (60) comprising data related to manufacturing tolerance of an electric parameter of a power transistor (22) i.e. insulated gate bipolar transistor. An electric circuit (26) controls the transistor adapted to operate for a reference value of the parameter. Another electric circuit includes inductance that is less than 100 nanoHenry. An assembly (70) formed with the latter electric circuit and the transistor has an electric parameter value whose deviation in absolute value with the reference value is strictly less than the manufacturing tolerance. The carrier is a note of the transistor. An independent claim is also included for a method for compensating manufacturing tolerances of an electric parameter of a power transistor.
Bibliography:Application Number: US201313834301