Transistor device with threshold voltage adjusted by body effect

A transistor device including a substrate, a gate structure, a first doped region, a second doped region and a body region is provided. The gate structure is disposed on the substrate. The first doped region and the second doped region are respectively disposed in the substrate at one side and anoth...

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Bibliographic Details
Main Authors Hsu, Wen-Ting, Lin, Hong-Ze
Format Patent
LanguageEnglish
Published 20.11.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A transistor device including a substrate, a gate structure, a first doped region, a second doped region and a body region is provided. The gate structure is disposed on the substrate. The first doped region and the second doped region are respectively disposed in the substrate at one side and another side of the gate structure. The first doped region and the second doped region have a first conductive type. The body region is disposed in the substrate at one side of the first doped region away from the gate structure. The body region has a second conductive type. The body region and the first doped region are separated by a distance, and no isolation structure exists between the body region and the first doped region.
Bibliography:Application Number: US201615251829