Semiconductor device structure and method for forming the same

• Main Authors: Fang, Wen-Han, Chen, Chang-Yin, Wu, Po-Chi, Tai, Ming-Chia
• Format: Patent
• Language: English
• Published: 20.11.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device structure is provided. The semiconductor device structure includes a substrate, a first fin structure and a second fin structure disposed over the substrate. The semiconductor device structure includes a first gate stack overlapping the first fin structure. The first gate stack has a first width. The first gate stack includes a first work function layer. A first top surface of the first work function layer is positioned above the first fin structure by a first distance. The semiconductor device structure includes a second gate stack disposed overlapping the second fin structure. The first width is less than a second width of the second gate stack. A second top surface of a second work function layer of the second gate stack is positioned above the second fin structure by a second distance. The first distance is less than the second distance.