Manufacturing method of IPS array substrate and IPS array substrate

The present invention provides a manufacturing method of an IPS array substrate and an IPS array substrate. The manufacturing method of the IPS array substrate according to the present invention uses a half-tone mask to simultaneously form a common electrode and a pixel electrode that stagger in a l...

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Bibliographic Details
Main Authors Zhou, Zhichao, Xia, Hui
Format Patent
LanguageEnglish
Published 06.11.2018
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Summary:The present invention provides a manufacturing method of an IPS array substrate and an IPS array substrate. The manufacturing method of the IPS array substrate according to the present invention uses a half-tone mask to simultaneously form a common electrode and a pixel electrode that stagger in a longitudinal direction so that the common electrode is set inside a common electrode channel of an insulation protection layer while the pixel electrode is set on an upper surface of the insulation protection layer to provide an IPS array substrate, which, compared to a traditional IPS array substrate, allows the common electrode and the pixel electrode to generate therebetween a longitudinal component of an electric field whereby liquid crystal of a liquid crystal panel that is located above the pixel electrode can be driven and used, where the liquid crystal is allowed to rotate horizontally and also allowed to generate a predetermined longitudinal tilt angle the TFT substrate can be a TFT substrate provided for a traditional IPS array substrate, making it possible to save one mask and associated process, as compared to a traditional FFS array substrate, and thus saving manufacturing cost.
Bibliography:Application Number: US201615328495