Heterojunction bipolar transistor unit cell and power stage for a power amplifier

A heterojunction bipolar transistor unit cell may include a compound semiconductor substrate. The heterojunction bipolar transistor unity may also include a base mesa on the compound semiconductor substrate. The base mesa may include a collector region on the compound semiconductor substrate and a b...

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Bibliographic Details
Main Authors Li, Xia, Yang, Bin, Miranda Corbalan, Miguel, Tao, Gengming
Format Patent
LanguageEnglish
Published 23.10.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A heterojunction bipolar transistor unit cell may include a compound semiconductor substrate. The heterojunction bipolar transistor unity may also include a base mesa on the compound semiconductor substrate. The base mesa may include a collector region on the compound semiconductor substrate and a base region on the collector region. The heterojunction bipolar transistor unity may further include a single emitter mesa on the base mesa.
Bibliography:Application Number: US201715614471