Method of fabricating tunnel transistors with abrupt junctions

• Main Authors: Vega, Reinaldo A, Yuan, Xiaobin, Alptekin, Emre, Tran, Hung H
• Format: Patent
• Language: English
• Published: 16.10.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method of manufacturing a tunnel field effect transistor (TFET) includes forming on a substrate covered by an epitaxially grown source material a dummy gate stack surrounded by sidewall spacers; forming doped source and drain regions followed by forming an inter-layer dielectric surrounding the sidewall spacers; removing the dummy gate stack, etching a self-aligned cavity; epitaxially growing a thin channel region within the self-aligned etch cavity; conformally depositing gate dielectric and metal gate materials within the self-aligned etch cavity; and planarizing the top surface of the replacement metal gate stack to remove the residues of the gate dielectric and metal gate materials.