Film thickness monitoring system and method using the same

• Main Authors: Shih, Pang-Min, Huang, Kuo-Hsin, Hsu, Yu-Lin, Lin, Chien-Hung, Sung, Chao-Feng
• Format: Patent
• Language: English
• Published: 16.10.2018
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; METALLURGY; PHYSICS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TESTING

A film thickness monitoring system is provided. The film thickness monitoring system includes a source, a valve, and a chamber. The source is configured to provide a deposition material. The valve is connected to the source. The chamber includes a manifold, a quartz crystal microbalance, and a pressure sensor. The manifold is connected to the valve and has at least one first nozzle and at least one second nozzle. The quartz crystal microbalance is disposed opposite to the at least one second nozzle. The deposition material is adapted to be deposited on the quartz crystal microbalance through the at least one second nozzle, and the quartz crystal microbalance includes a shutter facing the at least one second nozzle. The pressure sensor is disposed in the manifold. A method for monitoring a film thickness deposition process is also provided.