Manufacturing method for power semiconductor device, and power semiconductor device

• Main Authors: Hironaka, Yoichi, Shige, Kazuyoshi, Fujino, Junji, Yoneda, Yutaka
• Format: Patent
• Language: English
• Published: 09.10.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An object of the invention is to provide: a manufacturing method for a highly reliable power semiconductor device which prevents breakage of an conductor pattern and an insulating layer, and has bonding strength higher than that by the conventional bonding between the electrode terminal and the conductor pattern; and that power semiconductor device. Breakage of the conductor pattern and the insulating layer is prevented due to inclusion of: a step of laying an electrode terminal on a protrusion provided on a conductor pattern placed on a circuit-face side of a ceramic board so that a center portion of a surface to be bonded of the electrode terminal makes contact with a head portion of the protrusion; a step of pressurizing and ultrasonically vibrating a surface opposite to the surface to be bonded, of the electrode terminal, using an ultrasonic horn, to thereby bond the electrode terminal to the conductor pattern.