Efficient metal-insulator-metal capacitor

Capacitors and methods of forming the same include forming a self-assembled pattern of periodic first and second domains using first and second block copolymer materials over a substrate. The second block copolymer material is etched away. Material from the substrate is etched based on a pattern def...

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Bibliographic Details
Main Authors Jagannathan, Hemanth, Liu, Chi-Chun, Tang, Hao, Estrada-Raygoza, Isabel C, Chung, Kisup, Mignot, Yann A. M
Format Patent
LanguageEnglish
Published 02.10.2018
Subjects
ELECTRICITY
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Summary:Capacitors and methods of forming the same include forming a self-assembled pattern of periodic first and second domains using first and second block copolymer materials over a substrate. The second block copolymer material is etched away. Material from the substrate is etched based on a pattern defined by the first block copolymer material to form cavities in the substrate. A capacitor stack is conformally deposited over the substrate, such that the capacitor stack is formed on horizontal surfaces of the substrate and vertical surfaces of the cavities.
Bibliography:Application Number: US201715462501