Plasmon-enhanced terahertz graphene-based photodetector and method of fabrication

A plasmon-enhanced terahertz graphene-based photodetector exhibits an increased absorption efficiency attained by utilizing a tunable plasmonic resonance in sub-wavelengths graphene micro-ribbons formed on SiC substrate in contact with an array of bi-metallic electrode lines. The orientation of the...

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Bibliographic Details
Main Authors Drew, Howard Dennis, Sushkov, Andrei B, Cai, Xinghan, Jadidi, Mohammad M, Murphy, Thomas E, Fuhrer, Michael, Gaskill, David Kurt
Format Patent
LanguageEnglish
Published 25.09.2018
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:A plasmon-enhanced terahertz graphene-based photodetector exhibits an increased absorption efficiency attained by utilizing a tunable plasmonic resonance in sub-wavelengths graphene micro-ribbons formed on SiC substrate in contact with an array of bi-metallic electrode lines. The orientation of the graphene micro-ribbons is tailored with respect to the array of sub-wavelengths bi-metallic electrode lines. The graphene micro-ribbons extend at the angle of approximately 45 degrees with respect to the electrode lines in the bi-metal electrodes array. The plasmonic mode is efficiently excited by an incident wave polarized perpendicular to the electrode lines, and/or to the graphene micro-ribbons. The absorption of radiation by graphene is enhanced through tunable geometric parameters (such as, for example, the width of the graphene micro-ribbons) and control of a carrier density in graphene achieved through tuning the gate voltage applied to the photodetector.
Bibliography:Application Number: US201615555132