Directed self-assembly
The disclosure provides methods for directed self-assembly (DSA) of a block co-polymer (BCP). In one embodiment, a method includes: forming an oxide spacer along each of a first sidewall and a second sidewall of a cavity in a semiconductor substrate; forming a neutral layer between the oxide spacers...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
25.09.2018
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Subjects | |
Online Access | Get full text |
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Summary: | The disclosure provides methods for directed self-assembly (DSA) of a block co-polymer (BCP). In one embodiment, a method includes: forming an oxide spacer along each of a first sidewall and a second sidewall of a cavity in a semiconductor substrate; forming a neutral layer between the oxide spacers and along a bottom of the cavity; and removing the oxide spacers to expose the first and second sidewalls and a portion of the bottom of the cavity adjacent the first and second sidewalls. |
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Bibliography: | Application Number: US201715728877 |