3D vertical FET with top and bottom gate contacts

• Main Authors: Anderson, Brent A, Chu, Albert M
• Format: Patent
• Language: English
• Published: 11.09.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device includes a vertical transistor having a gate structure disposed about a channel region thereof. The vertical transistor has a top side above the gate structure and a bottom side below the gate structure. The top side includes metallization structures having a connection to the...