Poly-crystalline silicon ingot having a nucleation promotion layer comprising a plurality of chips and chunks of poly-crystalline silicon on the bottom
A poly-crystalline silicon ingot having a bottom and defining a vertical direction includes a plurality of silicon grains grown in the vertical direction, in which the plurality of the silicon grains have at least three crystal orientations; and a nucleation promotion layer comprising a plurality of...
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Main Authors | , , , , , , , , , |
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Format | Patent |
Language | English |
Published |
04.09.2018
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Subjects | |
Online Access | Get full text |
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Summary: | A poly-crystalline silicon ingot having a bottom and defining a vertical direction includes a plurality of silicon grains grown in the vertical direction, in which the plurality of the silicon grains have at least three crystal orientations; and a nucleation promotion layer comprising a plurality of chips and chunks of poly-crystalline silicon on the bottom, wherein the poly-crystalline silicon ingot has a defect density at a height ranging from about 150 mm to about 250 mm of the poly-crystalline silicon ingot that is less than 15%. |
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Bibliography: | Application Number: US201715583413 |