SRAM with multiple power domains

An SRAM facility adapted to power an address path using a first developed supply voltage and to power a data path using a second developed supply voltage, the first and second developed power supplies being separate, distinct, and different. The SRAM facility includes a power supply facility or a vo...

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Bibliographic Details
Main Authors Hanson, Scott, Chevallier, Christophe J
Format Patent
LanguageEnglish
Published 28.08.2018
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:An SRAM facility adapted to power an address path using a first developed supply voltage and to power a data path using a second developed supply voltage, the first and second developed power supplies being separate, distinct, and different. The SRAM facility includes a power supply facility or a voltage supply facility adapted to develop the first and second supply voltages.
Bibliography:Application Number: US201615345229