Metal gate structure and manufacturing method thereof

• Main Authors: Chiang, Tsung-Yu, Chen, Kuang-Hsin, Ho, Wei-Shuo
• Format: Patent
• Language: English
• Published: 21.08.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method of manufacturing a semiconductor structure includes receiving a substrate; patterning a first active region, a second active region and an isolation between the first active region and the second active region over the substrate; disposing an inter-level dielectric (ILD) over the substrate; forming a first gate extended over the first active region, the isolation and the second active region; and forming a second gate over the first active region and the second active region, wherein the second gate includes a first section disposed over the first active region and a second section disposed over the second active region, a portion of the ILD is disposed between the first section and the second section.