Semiconductor device and method of forming the same

• Main Authors: Hung, Yu-Hsiang, Chen, Yi-Wei, Chang, Chung-Fu, Liu, Chia-Jong, Fu, Ssu-I, Shen, Wen-Jiun, Lu, Man-Ling, Wu, Yen-Liang
• Format: Patent
• Language: English
• Published: 14.08.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method of forming a semiconductor device is provided. At least one stacked structure is provided on a substrate. A first spacer material layer, a second spacer material layer, and a third spacer material layer are sequentially formed on the substrate and cover the stacked structure. The first, second, and third spacer material layers are etched to form a tri-layer spacer structure on the sidewall of the stacked structure. The tri-layer spacer structure includes, from one side of the stacked structure, a first spacer, a second spacer, and a third spacer, and a dielectric constant of the second spacer is less than each of a dielectric constant of the first spacer and a dielectric constant of the third spacer.