Method for patterning a plurality of features for fin-like field-effect transistor (FinFET) devices

A method for patterning fins for FinFET devices are disclosed. The method includes forming elongated protrusions on a semiconductor substrate and forming a mask covering a first portion of the elongated protrusions. The method further includes forming a spacer surrounding the mask. The mask and the...

Full description

Saved in:
Bibliographic Details
Main Authors Lu, Kuei-Liang, Shieh, Ming-Feng, Liu, Ru-Gun, Ng, Hoi-Tou
Format Patent
LanguageEnglish
Published 14.08.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A method for patterning fins for FinFET devices are disclosed. The method includes forming elongated protrusions on a semiconductor substrate and forming a mask covering a first portion of the elongated protrusions. The method further includes forming a spacer surrounding the mask. The mask and the spacer together cover a second portion of the elongated protrusions. The method further includes removing a portion of the elongated protrusions not covered by the mask and the spacer. In an embodiment, an outer boundary of the spacer and the mask corresponds to an outer boundary of a non-rectangular pattern.
Bibliography:Application Number: US201615012205