Semiconductor memory device with charge-diffusion-less transistors

A semiconductor memory device includes a substrate, a multi-layered structure including a plurality of insulating layers and a plurality of conductive layers that are alternately formed above the substrate, and a pillar extending through the multi-layered structure. The pillar includes a semiconduct...

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Bibliographic Details
Main Authors Shingu, Masao, Fujiwara, Makoto, Kato, Tatsuya, Kondo, Masaki, Murata, Takeshi, Tsuda, Muneyuki, Kurusu, Takashi, Higuchi, Masaaki
Format Patent
LanguageEnglish
Published 24.07.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A semiconductor memory device includes a substrate, a multi-layered structure including a plurality of insulating layers and a plurality of conductive layers that are alternately formed above the substrate, and a pillar extending through the multi-layered structure. The pillar includes a semiconductor body extending along the pillar, and a charge-storing film around the semiconductor body, the charge-storing film having a first thickness at first portions facing the insulating layers and a second thickness greater than the first thickness at second portions facing the conductive layers.
Bibliography:Application Number: US201615280013