Method for obtaining a bonding surface for direct bonding

A process for obtaining a bonding surface for direct bonding includes: a) providing a substrate based on a sintered metal having a base surface with an RMS roughness lower than 6 nanometers and a PV roughness lower than 100 nanometers; b) bombarding the base surface with ionic species; c) depositing...

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Bibliographic Details
Main Authors Imbert, Bruno, Benaissa, Lamine, Gondcharton, Paul
Format Patent
LanguageEnglish
Published 24.07.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A process for obtaining a bonding surface for direct bonding includes: a) providing a substrate based on a sintered metal having a base surface with an RMS roughness lower than 6 nanometers and a PV roughness lower than 100 nanometers; b) bombarding the base surface with ionic species; c) depositing a metal layer on the base surface; and d) carrying out a mechanical and/or chemical polish of an exposed surface of the metal layer. A structure including a substrate based on a sintered metal the base surface of which is at least partially formed from a metal including ionic species implanted by bombardment of the base surface, and a metal layer of identical chemical composition to that of the metal base substrate and including a bonding surface with an RMS roughness lower than 0.6 nanometers and a PV roughness lower than 10 nanometers is also provided.
Bibliography:Application Number: US201414764072