Decoupled via fill

Techniques are disclosed for providing a decoupled via fill. Given a via trench, a first barrier layer is conformally deposited onto the bottom and sidewalls of the trench. A first metal fill is blanket deposited into the trench. The non-selective deposition is subsequently recessed so that only a p...

Full description

Saved in:
Bibliographic Details
Main Authors Shusterman, Yuriy V, Griggio, Flavio, Indukuri, Tejaswi K, Brain, Ruth A
Format Patent
LanguageEnglish
Published 17.07.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Techniques are disclosed for providing a decoupled via fill. Given a via trench, a first barrier layer is conformally deposited onto the bottom and sidewalls of the trench. A first metal fill is blanket deposited into the trench. The non-selective deposition is subsequently recessed so that only a portion of the trench is filled with the first metal. The previously deposited first barrier layer is removed along with the first metal, thereby re-exposing the upper sidewalls of the trench. A second barrier layer is conformally deposited onto the top of the first metal and the now re-exposed trench sidewalls. A second metal fill is blanket deposited into the remaining trench. Planarization and/or etching can be carried out as needed for subsequent processing. Thus, a methodology for filling high aspect ratio vias using a dual metal process is provided. Note, however, the first and second fill metals may be the same.
Bibliography:Application Number: US201415528425