Mesa shaped micro light emitting diode with bottom N-contact

A light emitting diode (LED) with a first electrical contact at the top of the LED and a second electrical contact at the bottom of the LED. Layers of materials are formed on a substrate. The layers of materials include a first semiconductor layer, a second semiconductor layer, and a light emitting...

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Bibliographic Details
Main Author Oyer, Celine Claire
Format Patent
LanguageEnglish
Published 10.07.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A light emitting diode (LED) with a first electrical contact at the top of the LED and a second electrical contact at the bottom of the LED. Layers of materials are formed on a substrate. The layers of materials include a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first and second semiconductor layers for producing light responsive to passing current through the light emitting layer. The formed layers of material are shaped into at least one semiconductor structure. A first electrical contact is formed on a top of the semiconductor structure, and a second electrical contact is formed at a bottom of the semiconductor structure. The second electrical contact is at least partially transparent.
Bibliography:Application Number: US201715721417