Methods for straining a transistor gate through interlayer dielectric (ILD) doping schemes

A method of making a semiconductor device includes doping a first portion of an interlayer dielectric (ILD) with an oxygen-containing material, wherein the ILD is over a substrate. The method further includes doping a second portion of the ILD with a large species material. The second portion includ...

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Bibliographic Details
Main Authors Wu, Cheng-Ta, Wu, Chii-Ming, Jangjian, Shiu-Ko, Chang, Lan-Fang, Lin, Kun-Tzu
Format Patent
LanguageEnglish
Published 10.07.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of making a semiconductor device includes doping a first portion of an interlayer dielectric (ILD) with an oxygen-containing material, wherein the ILD is over a substrate. The method further includes doping a second portion of the ILD with a large species material. The second portion includes an area of the ILD below the first portion, and the second portion is separated from the substrate. The method further includes annealing the ILD.
Bibliography:Application Number: US201715399241