Method for manufacturing a bipolar junction transistor

• Main Authors: Tegen, Stefan, Manger, Dirk
• Format: Patent
• Language: English
• Published: 10.07.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a method for manufacturing a bipolar junction type transistor. The method for manufacturing a bipolar junction type transistor comprises steps of providing a conductor substrate of a first conductive type bury layer, performing dopping on the conductor substrate in a collector electrode injection area in order to obtain a surface parallel with the semiconductor substrate and an collector electrode injection which is extended from the surface of the semiconductor substrate to the bury layer, providing a second conductive type base electrode layer on the surface of the semiconductor substrate, wherein the base electrode layer covers the electrode injection, providing a sarcrfice emission electrode layer on the base electrode layer, wherein the sarcrifice