Semiconductor device capable of realizing impedance control and method of manufacturing the same
An input/output wiring line 23 and a ground wiring line 22 are such that through glass vias are provided so as to form a strip line structure by blasting or electric discharge machining and thereafter metal films are formed on a surface and a rear surface. It is possible to configure the semiconduct...
Saved in:
Main Author | |
---|---|
Format | Patent |
Language | English |
Published |
26.06.2018
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | An input/output wiring line 23 and a ground wiring line 22 are such that through glass vias are provided so as to form a strip line structure by blasting or electric discharge machining and thereafter metal films are formed on a surface and a rear surface. It is possible to configure the semiconductor device with the impedance control by adjusting a conductor diameter of the input/output wiring line 23 and an insulating layer thickness between the input/output wiring line 23 and the ground wiring line 22. The present technology may be applied to the semiconductor device. |
---|---|
Bibliography: | Application Number: US201515316217 |