Zener diode

A Zener diode includes a semiconductor substrate, an anode electrode and a cathode electrode. The semiconductor substrate includes a p-type anode region, an n-type current path region and a drift region. The p-type anode region is connected to the anode electrode. The n-type current path region is i...

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Bibliographic Details
Main Authors Eguchi, Hiroomi, Kinpara, Hiromichi, Ikeda, Satoshi, Okawa, Takashi
Format Patent
LanguageEnglish
Published 19.06.2018
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Summary:A Zener diode includes a semiconductor substrate, an anode electrode and a cathode electrode. The semiconductor substrate includes a p-type anode region, an n-type current path region and a drift region. The p-type anode region is connected to the anode electrode. The n-type current path region is in contact with the anode region. The drift region is in contact with the anode region and the current path region. The drift region is of an n type. The drift region has a lower n-type impurity concentration than the current path region. The drift region is connected to the cathode electrode directly or via another n-type region.
Bibliography:Application Number: US201415030735