Field effect transistor and device thereof

• Main Authors: Chang, I-Fan, Chang, Wen-Tsung, Yang, Jui-Ming, Lu, Dien-Yang, Lee, Chi-Ju, Wu, Yen-Liang
• Format: Patent
• Language: English
• Published: 19.06.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A field-effect transistor includes a substrate having thereon an isolation region. A fin structure protrudes from a top surface of the isolation region. The fin structure extends along a first direction. A gate electrode strides across the fin structure and extends along a second direction. A fin co...