Field effect transistor and device thereof
A field-effect transistor includes a substrate having thereon an isolation region. A fin structure protrudes from a top surface of the isolation region. The fin structure extends along a first direction. A gate electrode strides across the fin structure and extends along a second direction. A fin co...
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Main Authors | , , , , , |
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Format | Patent |
Language | English |
Published |
19.06.2018
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Subjects | |
Online Access | Get full text |
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Summary: | A field-effect transistor includes a substrate having thereon an isolation region. A fin structure protrudes from a top surface of the isolation region. The fin structure extends along a first direction. A gate electrode strides across the fin structure and extends along a second direction. A fin corner layer wraps a lower portion of the gate electrode around the fin structure. A spacer covers a sidewall of the gate electrode and the fin corner layer. |
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Bibliography: | Application Number: US201715655919 |