Resistive random access memory devices and methods of forming the same

A method of controlling the forming voltage of a dielectric film in a resistive random access memory (ReRAM) device. The method includes depositing a dielectric film contains intrinsic defects on a substrate, forming a plasma-excited treatment gas containing H2 gas, and exposing the dielectric film...

Full description

Saved in:
Bibliographic Details
Main Authors CARTIER, EDUARD ALBERT, TAPILY, KANDABARA, CONSIGLIO, STEVEN, NARAYANAN, VIJAY, TSUNOMURA, TAKAAKI, ANDO, TAKASHI, HOPSTAKEN, MARINUS J.P, WAJDA, CORY, JAMISON, PAUL C
Format Patent
LanguageChinese
English
Published 21.06.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A method of controlling the forming voltage of a dielectric film in a resistive random access memory (ReRAM) device. The method includes depositing a dielectric film contains intrinsic defects on a substrate, forming a plasma-excited treatment gas containing H2 gas, and exposing the dielectric film to the plasma-excited treatment gas to create additional defects in the dielectric film without substantially changing a physical thickness of the dielectric film, where the additional defects lower the forming voltage needed for generating an electrically conducting filament across the dielectric film. The dielectric film can include a metal oxide film and the plasma-excited treatment gas may be formed using a microwave plasma source.
Bibliography:Application Number: TW20209118045