High electron mobility transistor device and manufacturing method thereof

A high electron mobility transistor device including a channel layer, a first barrier layer, and a P-type gallium nitride layer is provided. The first barrier layer is disposed on the channel layer. The P-type gallium nitride layer is disposed on the first barrier layer. The first thickness of the f...

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Bibliographic Details
Main Authors HWANG, ROBIN CHRISTINE, LU, CHIH-HUNG, CHOU, JIH-WEN, YEH, PO-HSIEN, TSAI, BO-AN, MU, ZHENGANG
Format Patent
LanguageChinese
English
Published 11.05.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A high electron mobility transistor device including a channel layer, a first barrier layer, and a P-type gallium nitride layer is provided. The first barrier layer is disposed on the channel layer. The P-type gallium nitride layer is disposed on the first barrier layer. The first thickness of the first barrier layer located directly under the P-type gallium nitride layer is greater than the second thickness of the first barrier layer located on two sides of the P-type gallium nitride layer.
Bibliography:Application Number: TW202211133309