Plasma etch tool for high aspect ratio etching

High aspect ratio features are etched using a plasma etching apparatus that can alternate between accelerating negative ions of reactive species at a low energy and accelerating positive ions of inert gas species at a high energy. The plasma etching apparatus can be divided into at least two regions...

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Bibliographic Details
Main Authors LILL, THORSTEN, PANAGOPOULOS, THEODOROS, BERRY III, IVAN L
Format Patent
LanguageChinese
English
Published 11.05.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:High aspect ratio features are etched using a plasma etching apparatus that can alternate between accelerating negative ions of reactive species at a low energy and accelerating positive ions of inert gas species at a high energy. The plasma etching apparatus can be divided into at least two regions that separate a plasma-generating space from an ionization space. Negative ions of the reactive species can be generated by electron attachment ionization in the ionization space when a plasma is ignited in the plasma-generating space. Positive ions of the inert gas species can be generated by Penning ionization in the ionization space when the plasma is quenched in the plasma-generating space.
Bibliography:Application Number: TW20209107788