TWI835928B

There is provided a solid-state imaging device having a configuration suitable for high integration. The solid-state imaging device includes a semiconductor layer, a photoelectric converter, a storage capacitor, and a first transistor. The photoelectric converter is provided in the semiconductor lay...

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Bibliographic Details
Main Authors TAKAHASHI, RYO, KOGA, SHINICHI, FURUYA, SHOGO, CHIBA, YOHEI, SUZUKI, ATSUSHI, SAKANO, YORITO, SUENAGA, JUN, SHIOYAMA, TADAMASA, YOSHIKAWA, RYOICHI
Format Patent
LanguageChinese
Published 21.03.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:There is provided a solid-state imaging device having a configuration suitable for high integration. The solid-state imaging device includes a semiconductor layer, a photoelectric converter, a storage capacitor, and a first transistor. The photoelectric converter is provided in the semiconductor layer, and generates an electric charge corresponding to a received light amount by photoelectric conversion. The storage capacitor is provided on the semiconductor layer, and includes a first insulating film having a first electrical film thickness. The first transistor is provided on the semiconductor layer, and includes a second insulating film having a second electrical film thickness larger than the first electrical film thickness.
Bibliography:Application Number: TW20198142022