TWI834156B

• Main Author: YE, RUBIN
• Format: Patent
• Language: Chinese
• Published: 01.03.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES

The invention discloses a plasma confinement ring, plasma processing equipment and a method for processing a semiconductor, the plasma confinement ring is arranged in a reaction cavity of the plasma processing equipment, and the plasma confinement ring comprises an annular side wall and a gas channel wall fixedly connected with the annular side wall; the annular side wall is placed on the support ring, and the support ring is fixed with the side wall of the reaction cavity; and the heat insulation gap is arranged in the annular side wall and is used for slowing down heat transfer from the gas channel wall to the side wall of the reaction cavity. According to the invention, the temperature of the plasma confinement ring reaches the preset temperature and is kept, so that the purpose of preventing polymer deposition is achieved.