TWI833155B

According to one embodiment, a method for manufacturing a semiconductor device includes placing a semiconductor chip on a first surface of a support substrate, forming a first resin layer covering the semiconductor chip on the first surface, and forming a second resin layer on a second surface of th...

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Bibliographic Details
Main Author TAKANO, EIJI
Format Patent
LanguageChinese
Published 21.02.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:According to one embodiment, a method for manufacturing a semiconductor device includes placing a semiconductor chip on a first surface of a support substrate, forming a first resin layer covering the semiconductor chip on the first surface, and forming a second resin layer on a second surface of the support substrate. The second surface is opposite the first surface. In some examples, the second resin layer can be formed to counteract or mitigate warpage of the support substrate that might otherwise result from use of the first resin layer.
Bibliography:Application Number: TW202211102629