Semiconductor device and manufacturing method thereof

A semiconductor device and a manufacturing method thereof are provided. The manufacturing method includes steps of: depositing an N-drift layer on a substrate, conducting an ion implant process on the N-drift layer to form a plurality of P-type pillars, depositing a N-type epitaxial layer on the P-t...

Full description

Saved in:
Bibliographic Details
Main Authors LIN, CHE-MING, JUN, KWANG-YEON, PARK, JONG-HO
Format Patent
LanguageChinese
English
Published 01.01.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A semiconductor device and a manufacturing method thereof are provided. The manufacturing method includes steps of: depositing an N-drift layer on a substrate, conducting an ion implant process on the N-drift layer to form a plurality of P-type pillars, depositing a N-type epitaxial layer on the P-type pillars, conducting an ion implant process on the N-type epitaxial layer to form a first P-type epitaxial layer and at least one localized P region, conducting a field oxidation to the first P-type epitaxial layer to form a second P-type epitaxial layer, and forming a field oxide layer on the first P-type epitaxial layer and the N-type epitaxial layer. The localized P region passes though the N-type epitaxial layer to the field oxide layer.
Bibliography:Application Number: TW202211126627