Raw material for forming thin film, method for manufacturing thin film, and scandium compound

• Main Authors: SATO, HARUYOSHI, YAMADA, NAOKI, HARANO, KAZUKI
• Format: Patent
• Language: Chinese; English
• Published: 01.12.2023
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention provides a thin-film forming raw material including a scandium compound represented by the following general formula (1), a method of producing a thin-film including using the thin-film forming raw material, and a novel scandium compound:where R1 represents an alkyl group having 1 to 4 carbon atoms, R2 represents an alkyl group having 2 or 3 carbon atoms, and R3 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.