Heterojunction bipolar transistor and power amplifier

A heterojunction bipolar transistor includes: a substrate; a base mesa disposed on the substrate, wherein the base mesa includes a collector layer and a base layer disposed on the collector layer, and wherein in a top view, the base layer includes a first edge and a second edge opposite to the first...

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Bibliographic Details
Main Authors KAO, CHIH-YANG, YU, CHIEN-RONG
Format Patent
LanguageChinese
English
Published 11.11.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A heterojunction bipolar transistor includes: a substrate; a base mesa disposed on the substrate, wherein the base mesa includes a collector layer and a base layer disposed on the collector layer, and wherein in a top view, the base layer includes a first edge and a second edge opposite to the first edge; an emitter layer disposed on the base layer; a base electrode disposed on the substrate and connected to the base layer; a dielectric layer disposed on the base electrode, wherein a first via hole is formed in the dielectric layer at the first edge of the base layer, and a second via hole is formed in the dielectric layer at the second edge of the base layer; and a conductive feature disposed on the dielectric layer, wherein the conductive feature is connected to the base electrode through the first via hole and the second via hole.
Bibliography:Application Number: TW202211123989