APPARATUS FOR PRODUCING SILICON CARBIDE CRYSTAL
An apparatus for producing silicon carbide crystal is provided and includes a composite structure formed by a plurality of graphite layers and silicon carbide seed crystals, wherein a density or thickness of each layer of graphite is gradually adjusted to reduce a difference of a thermal expansion c...
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Main Authors | , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
01.11.2023
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Subjects | |
Online Access | Get full text |
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Summary: | An apparatus for producing silicon carbide crystal is provided and includes a composite structure formed by a plurality of graphite layers and silicon carbide seed crystals, wherein a density or thickness of each layer of graphite is gradually adjusted to reduce a difference of a thermal expansion coefficient and Young's modulus between the graphite layers and silicon carbide. The composite structure can be stabilized on a top portion or an upper cover of a crucible made of graphite, thereby preventing the silicon carbide crystal from falling off. |
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Bibliography: | Application Number: TW202211131823 |