Substrate processing method

Disclosed is a substrate processing method including: a pressurizing operation of raising a process pressure from a first pressure (P1) to a second pressure (P2) that is greater than the atmospheric pressure; a depressurizing operation of lowering the process pressure from a sixth pressure (P6), whi...

Full description

Saved in:
Bibliographic Details
Main Authors JANG, WON JUN, PARK, KYUNG, LEE, DAE SEONG, KIM, JOO SUOP, NAM, SANG ROK, AHN, HAE JIN, KIM, CHANG HUN, HWANG, AH YOUNG
Format Patent
LanguageChinese
English
Published 11.09.2023
Subjects
BASIC ELECTRIC ELEMENTS
CONTROLLING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PHYSICS
REGULATING
SEMICONDUCTOR DEVICES
SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
Online AccessGet full text

Cover

More Information
Summary:Disclosed is a substrate processing method including: a pressurizing operation of raising a process pressure from a first pressure (P1) to a second pressure (P2) that is greater than the atmospheric pressure; a depressurizing operation of lowering the process pressure from a sixth pressure (P6), which is greater than the atmospheric pressure, to a seventh pressure (P7); and an annealing operation of changing the process pressure into a preset pressure change pattern between the pressurizing operation and the depressurizing operation, under a temperature atmosphere of a second temperature (T2) higher than the room temperature. A temperature raising operation of raising a temperature atmosphere from a first temperature (T1) to the second temperature (T2) is performed from a preset temperature raising start point (t1) to a preset temperature raising end point (t2) while the pressurizing operation is performed or after the pressurizing operation is performed.
Bibliography:Application Number: TW202110147430